Modeling and Simulation of High Speed VLSI Interconnects

When increasing the frequency one has to assemble the interconnect models using gradually smaller lumped components. As a result, the subcircuit model is bigger for higher frequencies which causes the circuit simulation to be more ...

Modeling and Simulation of High Speed VLSI Interconnects

Modeling and Simulation of High Speed VLSI Interconnects

Modeling and Simulation of High Speed VLSI Interconnects brings together in one place important contributions and state-of-the-art research results in this rapidly advancing area. Modeling and Simulation of High Speed VLSI Interconnects serves as an excellent reference, providing insight into some of the most important issues in the field.

Compact Models and Measurement Techniques for High Speed Interconnects

IEEE Micro 18(1), 12–24 (1998) R. Achar, M.S. Nakhla, Simulation of high-speed interconnects. ... 2001) M.S. Nakhla, Q.J. Zhang, Modeling and Simulation of High Speed VLSI Interconnects (Springer, Netherlands, 1994) W.-K. Chen, The VLSI ...

Compact Models and Measurement Techniques for High Speed Interconnects

Compact Models and Measurement Techniques for High Speed Interconnects

Compact Models and Measurement Techniques for High-Speed Interconnects provides detailed analysis of issues related to high-speed interconnects from the perspective of modeling approaches and measurement techniques. Particular focus is laid on the unified approach (variational method combined with the transverse transmission line technique) to develop efficient compact models for planar interconnects. This book will give a qualitative summary of the various reported modeling techniques and approaches and will help researchers and graduate students with deeper insights into interconnect models in particular and interconnect in general. Time domain and frequency domain measurement techniques and simulation methodology are also explained in this book.

The VLSI Handbook

In order to address the above difficulties, recent research in the circuit simulation area has focused on arriving at compact, accurate, as well as passive macromodels for high-speed interconnects. The problem of accuracy is addressed ...

The VLSI Handbook

The VLSI Handbook

For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

Design Automation Languages and Simulations

M.Nakhla, R.Achar, and R.Khazaka, Modeling and Simulation of High-Speed VLSI Interconnects, Chapter IV: Circuits And Systems In The Information Age, IEEE Publishers, NJ, pp. 187–215, 1997. 6. A.Deustsch, “Electrical characteristics of ...

Design Automation  Languages  and Simulations

Design Automation Languages and Simulations

As the complexity of electronic systems continues to increase, the micro-electronic industry depends upon automation and simulations to adapt quickly to market changes and new technologies. Compiled from chapters contributed to CRC's best-selling VLSI Handbook, this volume of the Principles and Applications in Engineering series covers a broad rang

High Speed VLSI Interconnections

A. K. Goel and N. R. Eady, “Characterization of Multipath Interconnects for Microelectronic and Nanotechnology Circuits,” Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems, ...

High Speed VLSI Interconnections

High Speed VLSI Interconnections

This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.

Computational Methods in Large Scale Simulation

D. Xie and M. Nakhla, “Delay and crosstalk simulation of high speed VLSI interconnects with nonlinear terminations,” IEEE Trans. ... model of transmission lines and application to interconnect delay estimation,” IEEE Trans on VLSI, pp.

Computational Methods in Large Scale Simulation

Computational Methods in Large Scale Simulation

This volume documents the research carried out by visiting scientists attached to the Institute for Mathematical Sciences (IMS) at the National University of Singapore and the Institute of High Performance Computing (IHPC) under the program “Advances and Mathematical Issues in Large Scale Simulation.” From 2002 to 2003, researchers from various countries gathered to initiate interesting and innovative work on various themes related to multiscale simulation and fast algorithms. Today, modeling and simulation are used extensively to solve complex problems and to reduce the use of experimentation during the design and analysis stage. It is important to know the various issues that have to be considered in the successful development of computational methodologies for such work. This volume is a compilation of the research by various visiting scientists in the area of modeling and multiscale simulation. Each article covers a major project and documents how computational methodology, mathematical modeling, high performance computing and simulation are combined in a multiscale scheme to solve a variety of complex problems. Some of these include the design, synthesis, processing, characterization and manufacture of nanomaterials and nanostructures, new algorithms for computational work, and grid computing. Through the included examples, readers can realize the vast potential of computational modeling and large scale simulation for the solution of problems in a variety of disciplines and applications. Contents:Methods of Multiscale Modeling in Mechanics (W A Curtin)Efficient and Accurate Boundary Methods for Computational Optics (C Hafner & J Smajic)Finite Element Modeling of Periodic Structures (Z Lou & J-M Jin)Factorization of Potential and Field Distributions without Utilizing the Addition Theorem (A-R Baghi-Wadji & E Li)Virtualization-Aware Application Framework for Hierarchical Multiscale Simulations on a Grid (A Nakano et al.)Molecular Dynamics Simulation and Local Quantities (T Ikeshoji)Recent Advances in Modeling and Simulation of High-Speed Interconnects (M Nakhla & R Achar)Multiscale Modeling of Degradation and Failure of Interconnect Lines Driven by Electromigration and Stress Gradients (R Atkinson & A M Cuitiño) Readership: Engineers, scientists and graduate students who need further insights into the applications and power of computational methodology for the solution of a wide array of problems. Keywords:Large Scale Simulation;High Performance Computing;Multiscale Simulation;Fast Algorithms;Computational MethodologyKey Features:Provides insight into the applications and power of computational methodology in solving a wide array of complex problems

On Chip Inductance in High Speed Integrated Circuits

T. K. Tang and M. S. Nakhla , " Analysis of High - Speed VLSI Interconnects Using the Asymptotic Waveform Evaluation ... S. P. McCormick , Modeling and Simulation of VLSI Interconnections with Moments , Ph.D. Thesis , Massachusetts ...

On Chip Inductance in High Speed Integrated Circuits

On Chip Inductance in High Speed Integrated Circuits

The appropriate interconnect model has changed several times over the past two decades due to the application of aggressive technology scaling. New, more accurate interconnect models are required to manage the changing physical characteristics of integrated circuits. Currently, RC models are used to analyze high resistance nets while capacitive models are used for less resistive interconnect. However, on-chip inductance is becoming more important with integrated circuits operating at higher frequencies, since the inductive impedance is proportional to the frequency. The operating frequencies of integrated circuits have increased dramatically over the past decade and are expected to maintain the same rate of increase over the next decade, approaching 10 GHz by the year 2012. Also, wide wires are frequently encountered in important global nets, such as clock distribution networks and in upper metal layers, and performance requirements are pushing the introduction of new materials for low resistance interconnect, such as copper interconnect already used in many commercial CMOS technologies. On-Chip Inductance in High Speed Integrated Circuits deals with the design and analysis of integrated circuits with a specific focus on on-chip inductance effects. It has been described throughout this book that inductance can have a tangible effect on current high speed integrated circuits. For example, neglecting inductance and using an RC interconnect model in a production 0.25 mum CMOS technology can cause large errors (over 35%) in estimates of the propagation delay of on-chip interconnect. It has also been shown that including inductance in the repeater insertion design process as compared to using an RC model improves the overall repeater solution in terms of area, power, and delay with average savings of 40.8%, 15.6%, and 6.7%, respectively. On-Chip Inductance in High Speed Integrated Circuits is full of design and analysis techniques for RLC interconnect. These techniques are compared to techniques traditionally used for RC interconnect design to emphasize the effect of inductance. emOn-Chip Inductance in High Speed Integrated Circuits will be of interest to researchers in the area of high frequency interconnect, noise, and high performance integrated circuit design.

Neural Networks for RF and Microwave Design

( 3 ] Nakhla , M. S. , and Q. J. Zhang , eds . , Modeling and Simulation of High Speed VLSI Interconnects , Norwell , MA : Kluwer , 1994 . ( 4 ) Dai , W. W. M. , ed . , “ Special Issue on Simulation , Modeling , and Electrical Design of ...

Neural Networks for RF and Microwave Design

Neural Networks for RF and Microwave Design

Discover the new, unconventional alternatives for conquering RF and microwave design and modeling problems using neural networks -- information processing systems that can learn, generalize, and even allow model development when component formulas are missing -- with this book and software package. It shows you the ease of creating models with neural networks, and how quick model evaluation can be done, plus other opportunities presented by neural networks for conquering the toughest RF and microwave CAD problems.

Compact Models and Performance Investigations for Subthreshold Interconnects

A. Nabavi-Lishi, N.C. Rumin, Inverter models of CMOS gates for supply current and delay evaluation. IEEE Trans. ... 3–8 D.H. Xie, M. Nakhla, Delay and crosstalk simulation of high-speed VLSI interconnects with nonlinear terminations.

Compact Models and Performance Investigations for Subthreshold Interconnects

Compact Models and Performance Investigations for Subthreshold Interconnects

The book provides a detailed analysis of issues related to sub-threshold interconnect performance from the perspective of analytical approach and design techniques. Particular emphasis is laid on the performance analysis of coupling noise and variability issues in sub-threshold domain to develop efficient compact models. The proposed analytical approach gives physical insight of the parameters affecting the transient behavior of coupled interconnects. Remedial design techniques are also suggested to mitigate the effect of coupling noise. The effects of wire width, spacing between the wires, wire length are thoroughly investigated. In addition, the effect of parameters like driver strength on peak coupling noise has also been analyzed. Process, voltage and temperature variations are prominent factors affecting sub-threshold design and have also been investigated. The process variability analysis has been carried out using parametric analysis, process corner analysis and Monte Carlo technique. The book also provides a qualitative summary of the work reported in the literature by various researchers in the design of digital sub-threshold circuits. This book should be of interest for researchers and graduate students with deeper insights into sub-threshold interconnect models in particular. In this sense, this book will best fit as a text book and/or a reference book for students who are initiated in the area of research and advanced courses in nanotechnology, interconnect design and modeling.

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